Amrane, N. and Benkraouda, M. (2013) https://journalpsij.com/index.php/PSIJ/article/download/194/387/388. Physical Review & Research International, 3 (3). pp. 205-217. ISSN 2348-0130
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Abstract
We present first principles calculations of the electronic properties of TlBr and TlCl binary semiconductor compounds. The dependences on hydrostatic pressure of these properties (band structure, density of states, electronic charge density) are successfully calculated using self-consistent scalar relativistic full potential linear augmented plane wave method (FP-LAPW) within the generalized gradient approximation (GGA). The GGA corrections yield only minor improvement, whereas Engel-Vosko approximation gives a significant improvement to the band gap. The results are compared with previous calculations and with experimental measurements, we found good agreement with our calculations.
Item Type: | Article |
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Subjects: | AP Academic Press > Physics and Astronomy |
Depositing User: | Unnamed user with email support@apacademicpress.com |
Date Deposited: | 23 Jun 2023 05:56 |
Last Modified: | 21 Oct 2024 03:53 |
URI: | http://info.openarchivespress.com/id/eprint/1631 |